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점하중시험법에 의한 반도체 기판용 실리콘 웨이퍼의 파괴강도 평가
논문 개요
| 기관명 | NDSL |
|---|---|
| 저널명 | 신뢰성응용연구 = Journal of the applied reliability |
| ISSN | 1738-9895, |
| ISBN |
논문저자 및 소속기관 정보
| 저자(한글) | 이승미,변재원 |
|---|---|
| 저자(영문) | |
| 소속기관 | |
| 소속기관(영문) | |
| 출판인 | |
| 간행물 번호 | |
| 발행연도 | 2016-01-01 |
| 초록 | Purpose: The purpose of this study was to investigate the effect of grinding process and thickness on the fracture strength of silicon die used for semiconductor substrate. Method: Silicon wafers with different thickness from $200{ mu}m$ to $50{ mu}m$ were prepared by chemical mechanical polishing (CMP) and dicing before grinding (DBG) process, respectively. Fracture load was measured by point load test for 50 silicon dies per each wafer. Results: Fracture strength at the center area was lower than that at the edge area of the wafer fabricated by DBG process, while random distribution of the fracture strength was observed for the CMPed wafer. Average fracture strength of DBGed specimens was higher than that of the CMPed ones for the same thickness of wafer. Conclusion: DBG process can be more helpful for lowering fracture probability during the semiconductor fabrication process than CMP process. |
| 원문URL | http://click.ndsl.kr/servlet/OpenAPIDetailView?keyValue=03553784&target=NART&cn=JAKO201614138121469 |
| 첨부파일 |
추가정보
| 과학기술표준분류 | |
|---|---|
| ICT 기술분류 | |
| DDC 분류 | |
| 주제어 (키워드) | Silicon Wafer,Point Load Test,Chemical Mechanical Polishing,Dicing before Grinding,Fracture |