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고이동도 산화물 반도체 박막 트랜지스터 구현을 위한 구동전류 향상
논문 개요
| 기관명 | NDSL |
|---|---|
| 저널명 | 전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers |
| ISSN | 1226-7945, |
| ISBN |
논문저자 및 소속기관 정보
| 저자(한글) | 장경수,김태용,강승민,이소진,이윤정,이준신 |
|---|---|
| 저자(영문) | |
| 소속기관 | |
| 소속기관(영문) | |
| 출판인 | |
| 간행물 번호 | |
| 발행연도 | 2015-01-01 |
| 초록 | Next-generation displays should be transparent and flexible as well as having high resolution and frame number. The main factor for active matrix organic light emitting diode and next-generation displays is the development of TFTs (thin-film transistors) with high mobility and large area uniformity. The TFTs used for transparent displays are mainly oxide TFT that has oxide semiconductor as channel layer. Zinc-oxide based substances such as indium-gallium-zinc-oxide has attracted attention in the display industry. In this paper, the mobility improvement of low cost oxide TFT is studied for fast operating next-generation displays by overcoming disadvantages of amorphous silicon TFT that has low mobility and poly silicon TFT that requires expensive equipment for complex process and doping process. |
| 원문URL | http://click.ndsl.kr/servlet/OpenAPIDetailView?keyValue=03553784&target=NART&cn=JAKO201518050733662 |
| 첨부파일 |
추가정보
| 과학기술표준분류 | |
|---|---|
| ICT 기술분류 | |
| DDC 분류 | |
| 주제어 (키워드) | Next-generation displays,Transparent,Flexible,Thin-film transistor,Oxide semiconductor,High mobility |