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Schottky-type polycrystalline CdZnTe X-ray detectors
논문 개요
| 기관명 | NDSL |
|---|---|
| 저널명 | Current Applied Physics |
| ISSN | , |
| ISBN |
논문저자 및 소속기관 정보
| 저자(한글) | 김기현,조신행,JongHee Suh,JaeHo Won,홍진기,김선웅,고려대학교,Korea University,고려대학교,고려대학교,고려대학교,고려대학교 |
|---|---|
| 저자(영문) | |
| 소속기관 | |
| 소속기관(영문) | |
| 출판인 | |
| 간행물 번호 | |
| 발행연도 | 2009-01-01 |
| 초록 | The polycrystalline CdZnTe:Cl thick films which have high resistivity about 5 × 109 Ωcm are grown by thermal evaporation method.The leakage currents of as-deposited CdZnTe layers are still too high to operate as medical applications. The blocking layer of Schottkytype was formed on the stoichiometric surface of polycrystalline CdZnTe layers to suppress the leakage current of polycrystallineCdZnTe X-ray detectors. The polycrystalline CdZnTe Schottky barrier diodes with indium contact exhibit the low leakage current(14 nA/㎠) at 40 V due to its high barrier height (φb = 0.80 eV). In X-ray image acquisition with Schottky-type linear array polycrystallineCdZnTe X-ray detector, we have obtained the promising results and proved the possibility of polycrystalline CdZnTe for applicationsas a flat panel X-ray detector. |
| 원문URL | http://click.ndsl.kr/servlet/OpenAPIDetailView?keyValue=03553784&target=NART&cn=ART001326410 |
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